Research-Thin Film Diamond-Diamond Characterization

DIAMOND CHARACTERIZATION
Diamond-on-insulator (DOI) wafers are characterized by AFM, thin film stress measurement system, spectroscopic ellipsometer and reflectometer.

 

Wafer

 

Rq

 

Ra

Si/SiO2/C+CMP

1.256 nm(1um*1um)
1.105 nm(5um*5um)

0.862 nm(1um*1um)
0.765  nm(5um*5um)

 

 

  

 

 

 

 

Figure 1. AFM surface roughness measurement of the DOI wafer

 

                                                         

 

Figure 2. AFM surface roughness measurement of the DOI wafer

 

 

 

Figure 3. Thin film stress measurement of the DOI wafer